Conductivity of high-resistance π layers and parameters of iron-doped GaAs diode structures

We propose a method for determining the behavior of the conductivity of high-resistance photosensitive films separated from the substrate by a space charge region. The method is based on measurement of the potential distribution ϕ(r) over the surface of an illuminated film which arises as the photocurrent flows through it. We have studied diode structures made ofn-GaAs, fabricated by doping with deep acceptor impurities which act as fast switches and photodetectors with high sensitivity in the ultraviolet region. The results are compared with literature data for iron-doped GaAs.