IMPROVED LIQUID-PHASE-EPITAXIAL GROWTH METHOD FOR GAAS-(GA,AL)AS DOUBLE HETEROSTRUCTURES

被引：2
|
作者：
AKITA, K [1 ]
NISHITANI, Y [1 ]
NAKAJIMA, K [1 ]
YAMAGUCHI, A [1 ]
KUSUNOKI, T [1 ]
KOTANI, T [1 ]
IMAI, H [1 ]
TAKUSAGAWA, M [1 ]
RYUZAN, O [1 ]
机构：
[1] FUJITSU LABS LTD,KAWASAKI,JAPAN
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期
关键词：
D O I：
10.1109/JQE.1977.1069395
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：585 / 587
页数：3
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