SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS

被引：38
|
作者：
AHOPELTO, J
LIPSANEN, H
SOPANEN, M
KOLJONEN, T
NIEMI, HEM
机构：
[1] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO,FINLAND
[2] VTT ELECTR,SF-02150 ESPOO,FINLAND
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期
关键词：
D O I：
10.1063/1.112903
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low-temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three-dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self-organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.
引用
收藏
页码：1662 / 1664
页数：3
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