SELECTIVE AREA LPE GROWTH AND OPEN TUBE DIFFUSION IN INGAAS/INP

被引:12
|
作者
CHAND, N [1 ]
HOUSTON, PA [1 ]
机构
[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD S1 3JD, S YORKSHIRE, ENGLAND
关键词
D O I
10.1007/BF02657916
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:9 / 24
页数:16
相关论文
共 50 条
  • [1] LPE GROWTH OF INGAAS/INP AND ALGAINAS/INP STRUCTURES
    NAKAJIMA, K
    [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4): : 97 - 213
  • [2] LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/InGaAs(P)
    李维旦
    潘慧珍
    [J]. Journal of Electronics(China), 1988, (03) : 233 - 238
  • [3] LPE GROWTH OF INP/INGAAS/INP DH WAFERS ON (100) INP SUBSTRATES
    TAKAHASHI, NS
    SASAKI, T
    FUKUSHIMA, A
    KURITA, S
    [J]. ELECTRONICS LETTERS, 1983, 19 (11) : 402 - 403
  • [4] LPE DIFFUSION-LIMITED GROWTH OF INGAAS
    PAN, N
    TABATABAIE, N
    STILLMAN, GE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (01) : 97 - 104
  • [5] OPEN-TUBE DIFFUSION TECHNIQUES FOR INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    SCHUITEMAKER, P
    HOUSTON, PA
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (06) : 383 - 387
  • [6] Non-planar nano-selective area growth of InGaAs/InP
    Kuznetsova, N.
    Colman, P.
    Semenova, E.
    Kadkhodazadeh, S.
    Kryzhanovskaya, N. V.
    Ek, S.
    Xue, W.
    Schubert, M.
    Zhukov, A. E.
    Yvind, K.
    [J]. QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION, AND MODELING XI, 2014, 8996
  • [7] Surface morphology of InP/InGaAs in selective area growth by chemical beam epitaxy
    Verschuren, CA
    Leys, MR
    Oei, YS
    Vreeburg, CGM
    Vonk, H
    Rongen, RTH
    Wolter, JH
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 650 - 654
  • [8] Selective Area Growth of InGaAs/InP Quantum Well Nanowires on SOI Substrate
    Li, Y.
    Wang, M.
    Fang, X.
    He, Y. M.
    Wang, P.
    Wang, H.
    Li, Z.
    Zhou, X.
    Yu, H.
    Chen, W.
    Pan, J.
    [J]. SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 2018, 86 (07): : 115 - 121
  • [9] SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS
    AHOPELTO, J
    LIPSANEN, H
    SOPANEN, M
    KOLJONEN, T
    NIEMI, HEM
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (13) : 1662 - 1664
  • [10] SULFUR DIFFUSION INTO INP BY AN OPEN TUBE PROCESS
    PARAT, KK
    GHANDHI, SK
    [J]. SOLID-STATE ELECTRONICS, 1988, 31 (06) : 1053 - 1056