Selective growth of InP/InGaAs ⟨010⟩ ridges:: Physical and optical characterization

被引：12

作者：

Poole, P. J. ^{[1
]}

Aers, G. C. ^{[1
]}

Kam, A. ^{[1
]}

Dalacu, D. ^{[1
]}

Studenikin, S. ^{[1
]}

Williams, R. L. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 06期

关键词：

chemical beam epitaxy; selective epitaxy; phosphides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2007.12.062

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The selective growth of InP/InGaAs ridges aligned along the < 010 > direction was studied using scanning electron microscopy and photoluminescence measurements. The ridges exhibit very smooth {110} sidewalls and (0 0 1) top facets. The diffusion of the group III species from the sidewalls to the top (0 0 1) surface was modelled to provide a predictive tool for determining ridge growth, and the optical properties of InGaAs QWs incorporated in the ridges. No growth occurs on the {110} sidewalls until the ridges complete due to the diffusion of In species to the top (0 0 1) facet. The situation for Ga is quite different, with no diffusion off the {110} facets observed, and little or no Ga being incorporated on the {110} surface before or after ridge completion. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

引用

页码：1069 / 1074

页数：6

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