SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS

被引：38
|
作者：
AHOPELTO, J
LIPSANEN, H
SOPANEN, M
KOLJONEN, T
NIEMI, HEM
机构：
[1] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO,FINLAND
[2] VTT ELECTR,SF-02150 ESPOO,FINLAND
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期
关键词：
D O I：
10.1063/1.112903
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low-temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three-dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self-organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.
引用
收藏
页码：1662 / 1664
页数：3
相关论文
共 50 条
  • [31] Selective-area growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si and tunneling transistor application
    Tomioka, Katsuhiro
    Ishizaka, Fumiya
    Motohisa, Junichi
    Fukui, Takashi
    [J]. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [32] Controlled growth of InGaAs/InGaAsP/InP Quantum Dots using diblock copolymer lithography and selective area MOCVD growth
    Mawst, L. J.
    Park, J. H.
    Kirch, J.
    Liu, C. -C.
    Rathi, M. K.
    Nealey, P. F.
    Kuech, T. F.
    [J]. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2, 2009, : 739 - +
  • [33] INGAAS/INP HBTS WITH A BURIED SUBCOLLECTOR FABRICATED BY SELECTIVE EPITAXY
    FREI, MR
    HAYES, JR
    SONG, JI
    CANEAU, C
    BHAT, R
    COX, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2657 - 2658
  • [34] GROWTH OF VPE INP-INGAAS ON INP FOR PHOTO-DIODE APPLICATION
    YAMAUCHI, Y
    SUSA, N
    KANBE, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 402 - 409
  • [35] SELECTIVE GROWTH AND CHRACTERIZATION OF InGaAs QUANTUM DOTS ON PATTERNED InP SUBSTRATES UTILIZAING A DIBLOCK COPOLYMER TEMPLATE
    Park, J. H.
    Kirch, J.
    Liu, C-C.
    Rathi, M. K.
    Mawst, L. J.
    Nealey, P. F.
    Kuech, T. F.
    [J]. 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 52 - +
  • [36] Growth and properties of thin InGaAs epitaxial layers on InP
    Belogorokhov, AI
    Milvidskii, MG
    Osipova, AN
    [J]. JOURNAL OF MOLECULAR STRUCTURE, 1997, 410 : 253 - 257
  • [37] STUDY OF INTERRUPTED MOVPE GROWTH OF INGAAS/INP SUPERLATTICE
    JIANG, XS
    CLAWSON, AR
    YU, PKL
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 547 - 552
  • [38] InP/InGaAs Coreshell Nanowire Heterostructures: Growth and Characterisation
    Ramesh, V.
    Gao, Q.
    Tan, H. H.
    Paiman, S.
    Guo, Y. N.
    Zou, J.
    Jagadish, C.
    [J]. PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010), 2010, : 83 - 84
  • [39] GAS SOURCE MEE GROWTH OF INGAAS/INP SUPERLATTICES
    ASAHI, H
    KOHARA, T
    SONI, RK
    TAKEYASU, N
    ASAMI, K
    EMURA, S
    GONDA, S
    [J]. APPLIED SURFACE SCIENCE, 1992, 60-1 : 625 - 630
  • [40] Inverse Stranski-Krastanov growth in InGaAs/InP
    Sears, L.
    Riposan, A.
    Millunchick, J. Mirecki
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (05): : 1175 - 1180
12345