共 50 条
- [1] MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1186 - 1188
- [2] SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS [J]. APPLIED PHYSICS LETTERS, 1994, 65 (13) : 1662 - 1664
- [3] ION-IMPLANTATION INTO INP/INGAAS HETEROSTRUCTURES GROWN BY MOVPE [J]. ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 333 - 338
- [5] High power InAlAs/InGaAs/InP-HFET grown by MOVPE [J]. 1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 24 - 27
- [7] MOVPE self-assembling growth of nanoscale InP and InAsP islands [J]. COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 271 - 274
- [8] Physical mechanisms of photoluminescence of InGaAs(N) alloy films grown by MOVPE [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 234 (03): : 782 - 786
- [9] Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates [J]. EPJ PHOTOVOLTAICS, 2023, 14
- [10] Photoluminescence of InGaAs Islands on Si (111) Substrate Grown using Micro-Channel Selective-Area MOVPE [J]. 2012 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN), 2012, : 200 - +