PROPERTIES OF SPUTTERED MOS2 FILMS

被引：0
|
作者：
BUCK, V [1 ]
机构：
[1] DFVLR,INST TECH PHYS,D-7000 STUTTGART 80,FED REP GER
来源：
VAKUUM-TECHNIK | 1988年 / 37卷 / 04期
关键词：
Films; -; Morphology; Sputtering;
D O I：
暂无
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
The stoichiometry of sputtered MoS2 films depends mainly on the ratio of deposition rate of H2O-partial pressure during sputtering, where water is present in trace amounts. This variation of the stoichiometry causes changes of the morphology and of the lattice parameters of the films.
引用
收藏
页码：111 / 114
页数：4
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