ENHANCED AMBIPOLAR INPLANE TRANSPORT IN AN INAS/GAAS HETERO-N-I-P-I

被引：11

作者：

MCCALLUM, DS ^{[1
]}

CARTWRIGHT, AN ^{[1
]}

HUANG, XR ^{[1
]}

BOGGESS, TF ^{[1
]}

SMIRL, AL ^{[1
]}

HASENBERG, TC ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.352897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-plane transport in an InAs/GaAs semiconductor hetero-n-i-p-i has been investigated using picosecond transient grating techniques and an order-of-magnitude enhancement of the ambipolar transport relative to that measured in a similar undoped sample has been demonstrated. Both the magnitude and the density dependence of this enhanced transport are consistent with an additional driving force that is associated with an in-plane modulation of the screened n-i-p-i field. This modulation is the result of the spatial separation by perpendicular transport of electrons and holes that also have an in-plane density modulation.

引用

页码：3860 / 3866

页数：7

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