A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes

被引：0
|
作者：
Ayzenshtat, G. I. [1 ]
Yushchenko, A. Yu. [2 ]
机构：
[1] Tomsk Natl Res Univ, Tomsk 634050, Russia
[2] Res Inst Semicond Devices, Tomsk 634050, Russia
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2015年 / 58卷 / 02期
关键词：
GaAs; Carrier Lifetime; Effective Lifetime; Bulk Lifetime; High Injection Level;
D O I：
10.1134/S0020441215010236
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion length to the square of the radius of the diode active region. Based on this regularity, a method was developed that provides simple determination of the ambipolar-diffusion length and the carrier lifetime.
引用
收藏
页码：279 / 282
页数：4
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