Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part I: Device model

被引：46
|
作者：
Bryant, Angus T. [1 ]
Lu, Liqing [2 ]
Santi, Enrico [2 ]
Palmer, Patrick R. [3 ]
Hudgins, Jerry L. [4 ]
机构：
[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[3] Univ Cambridge, Ctr Adv Photon & Elect, Dept Engn, Cambridge CB3 0FA, England
[4] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2008年 / 23卷 / 01期
关键词：
lifetime control; physics-based model; p-i-n diode model; power semiconductor modeling; variable lifetime;
D O I：
10.1109/TPEL.2007.911823
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It uses a Fourier series solution for the ambipolar diffusion equation in the lightly doped base region. The model is compared with finite-element device simulations. A parameter extraction procedure for the diode with lifetime control is proposed in Part II.
引用
收藏
页码：189 / 197
页数：9
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