Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part II: Parameter extraction

被引：23
|
作者：
Lu, Liqing [1 ]
Bryant, Angus T. [2 ]
Santi, Enrico [1 ]
Palmer, Patrick R. [3 ]
Hudgins, Jerry L. [4 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
[3] Univ Cambridge, Ctr Adv Photon & Elect, Dept Engn, Cambridge CB3 0FA, England
[4] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2008年 / 23卷 / 01期
关键词：
lifetime control; physics-based model; p-i-n diode model; power semiconductor modeling; variable lifetime;
D O I：
10.1109/TPEL.2007.911825
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a parameter extraction procedure for high-voltage diodes with local lifetime control is proposed. It is designed for use with the physics-based diode model described in Part I, which is capable of simulating diodes with local lifetime control. The parameter extraction procedure described requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite-element simulations. The physics-based model using the parameters extracted is then compared with experimental results.
引用
收藏
页码：198 / 205
页数：8
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