Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime

被引：7
|
作者：
Kaji, Naoki [1 ]
Suda, Jun [1 ]
Kimoto, Tsunenobu [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 09期
基金：
日本学术振兴会;
关键词：
PIN DIODES; KV; DEVICES; TERMINATION; 4H;
D O I：
10.7567/JJAP.54.098004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Forward characteristics of ultrahigh-voltage 4H-SiC p-i-n diodes having four different n(-)-layer (i-layer) thicknesses from 48 to 198 mu m were investigated in the temperature range from room temperature to 573 K. After enhancement of carrier lifetimes in i-layers, nearly ideal forward characteristics (differential on-resistance = 1.1-5.5 m Omega cm(2) at 100A/cm(2)) were obtained at room temperature. The forward voltage drop decreased with temperature, which is consistent with the temperature dependence of junction voltage. The differential on-resistance exhibited a slight increase at elevated temperatures, which can mainly be ascribed to the increase in substrate resistance. (C) 2015 The Japan Society of Applied Physics
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页数：3
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