Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing

被引：40
|
作者：
Caldwell, Joshua D. [1 ]
Stahlbush, Robert E. [1 ]
Hobart, Karl D. [1 ]
Glembocki, Orest J. [1 ]
Liu, Kendrick X. [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期
关键词：
D O I：
10.1063/1.2719650
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Recent reports have shown that Shockley stacking fault (SSF) growth in 4H-SiC may be reversed via low temperature (210-600 degrees C) annealing. It is not clear if the associated drift in the forward voltage drop (V-f) is also reversed. Here we show that annealing of SSFs causes the complete and repeatable recovery of V-f. Furthermore, by looking at the time-dependent recovery of V-f during both the current stressing and thermal annealing of a single diode, we ascertain that the mechanisms for these two processes are different. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] The Role of Defects on Forward Current in 4H-SiC p-i-n Diodes
    Sozzi, Giovanna
    Puzzanghera, Maurizio
    Menozzi, Roberto
    Nipoti, Roberta
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (07) : 3028 - 3033
  • [2] Termination optimization for 4H-SiC p-i-n diodes
    Boianceanu, C.
    Zekentes, K.
    Camara, N.
    Kayambaki, M.
    Rouet, W.
    2006 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, 2007, : 327 - +
  • [3] Bipolar degradation of high voltage 4H-SiC p-i-n diodes in pulse regime
    Levinshtein, Michael
    Ivanov, Pavel
    Palmour, John
    Agarwal, Anant
    Das, Mrinal
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 539 - +
  • [4] Microwave p-i-n diodes and switches based on 4H-SiC
    Zekentes, K.
    Camara, N.
    Romanov, L. P.
    Kirillov, A. V.
    Boltovets, M. S.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 999 - +
  • [5] Microwave p-i-n diodes and switches based on 4H-SiC
    Zekentes, Konstantinos
    Camara, Nicolas
    Konstantinidis, George
    Romanov, Leonid P.
    Kirillov, Aleksey V.
    Boltovets, Mykola S.
    2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2006, : 1525 - +
  • [6] Microwave p-i-n diodes and switches based on 4H-SiC
    Camara, N
    Zekentes, K
    Romanov, LP
    Kirillov, AV
    Boltovets, MS
    Vassilevski, KV
    Haddad, G
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (02) : 108 - 110
  • [7] Microwave modulators based on 4H-SiC p-i-n diodes
    Zekentes, Konstantinos
    Camara, Nicolas
    Basanets, Volodymyr V.
    Boltovets, Mykola S.
    Kryvutsa, Valentyn A.
    Orechovskij, Volodymyr O.
    Simonchuk, Vasyl I.
    Zorenko, Alexander V.
    Bano, Edwige
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (04) : 803 - 808
  • [8] Microwave switches based on 4H-SiC p-i-n diodes
    Bludov, AV
    Boltovets, NS
    Vasilevskii, KV
    Zorenko, AV
    Zekentes, K
    Krivutsa, VA
    Kritskaya, TV
    Lebedev, AA
    TECHNICAL PHYSICS LETTERS, 2004, 30 (02) : 123 - 125
  • [9] Microwave switches based on 4H-SiC p-i-n diodes
    A. V. Bludov
    N. S. Boltovets
    K. V. Vasilevskii
    A. V. Zorenko
    K. Zekentes
    V. A. Krivutsa
    T. V. Kritskaya
    A. A. Lebedev
    Technical Physics Letters, 2004, 30 : 123 - 125
  • [10] Drift Phenomena of Forward and Reverse Recovery Characteristics in {0001} 4H-SiC p-i-n Diode
    Nakayama, Koji
    Sugawaray, Yoshitaka
    Tsuchida, Hidekazu
    Kimura, Chiharu
    Aoki, Hidemitsu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
12345