Bipolar degradation of high voltage 4H-SiC p-i-n diodes in pulse regime

被引：6
|
作者：
Levinshtein, Michael [1 ]
Ivanov, Pavel [1 ]
Palmour, John [2 ]
Agarwal, Anant [2 ]
Das, Mrinal [2 ]
机构：
[1] AF Ioffe Phys Tech Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia
[2] Cree Inc, Durham, NH 27703 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷
关键词：
Bipolar diode; degradation; stacking faults; pulse regime;
D O I：
10.4028/www.scientific.net/MSF.679-680.539
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on specific features of forward voltage degradation of 4H-SiC p-i-n diodes in the pulse mode. It is shown that pulse stresses with a pulse duration shorter than several milliseconds cause substantially smaller forward voltage drift in comparison with a dc stress with the same charge passed through the diodes and the same distribution of injected carriers. A self-recovery of the forward voltage is observed at room temperature.
引用
收藏
页码：539 / +
页数：2
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