Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses

被引：0

作者：

M. E. Levinshtein

P. A. Ivanov

J. W. Palmour

A. K. Agarwal

M. K. Das

机构：

[1] Russian Academy of Sciences,Ioffe Physical Technical Institute

[2] Cree Inc.,undefined

来源：

Technical Physics Letters | 2011年 / 37卷

关键词：

Technical Physic Letter; Pulse Regime; Voltage Drift; Power Semiconductor Device; Forward Voltage Drop;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Degradation in silicon carbide based p-i-n diodes under the action of a forward current in a pulsed regime has been studied for the first time. It is established that, at current pulse durations below several milliseconds, the extent of degradation is much smaller than that in the dc regime for the same total charge transferred through the diode structure. The partial self-recovery (decrease in the extent of degradation with the time) of the diode structures at room temperature was also observed for the first time.

引用

页码：347 / 349

页数：2

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