Forward-current-generated donor centers in high-voltage 4H-SiC based p-i-n diodes

被引：0
|
作者：
A. M. Ivanov
M. E. Levinshtein
J. W. Palmour
A. K. Agarwal
M. K. Das
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
[2] Cree Inc.,undefined
来源：
Technical Physics Letters | 2011年 / 37卷
关键词：
Technical Physic Letter; Deep Level Transient Spectroscopy; Current Transfer; Base Thickness; Deep Level Transient Spectroscopy Spectrum;
D O I：
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中图分类号：
学科分类号：
摘要：
High-voltage diodes based on silicon carbide of 4H polytype (4H-SiC) have been studied by the deep-level transient spectroscopy (DLTS) method. It is established that the passage of forward current leads to the activation of a donor center with an activation energy of Ec − 0.2 eV and an electron capture cross section of σn ∼ 2.0 × 10−15 cm2. The DLTS measurements reveal the appearance of this center upon the transfer of a very small charge through the diode, under the conditions where the forward voltage drop on the diode remains almost unchanged. A possible nature of the observed phenomenon is discussed.
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页码：911 / 913
页数：2
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