Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method

被引：11

作者：

Dutta, Maitreya ^{[1
]}

Mandal, Saptarshi ^{[1
]}

Hathwar, Raghuraj ^{[2
]}

Fischer, Alec M. ^{[3
]}

Koeck, Franz A. M. ^{[3
]}

Nemanich, Robert J. ^{[3
]}

Goodnick, Stephen M. ^{[2
]}

Chowdhury, Srabanti ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 04期

关键词：

Charge carrier lifetime; diamond; power semiconductor devices; p-i-n diodes; BIPOLAR JUNCTION TRANSISTOR; BASE;

D O I：

10.1109/LED.2018.2804978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The extracted minority carrier lifetime in the n-layer of a diamond p-i-n diode on (111)-oriented diamond is presented here using the diode reverse recoverymethod. The storage time delay and the reverse current varied as a function of the ramp time for the applied signal. The storage time delay and reverse current was extracted for zero ramp time by considering a capacitive overshoot effect that can occur during themeasurement. Theminority carrier lifetime of holes was measured to be similar to 6 ns. The results obtained were compared to p-i-n diodes on (100)- where the n-side was fully depleted. The storage time delay was found to be negligible in the (100)-case. Further, time resolved cathodoluminescence measurements support the lifetime results obtained from the reverse recovery method.

引用

页码：552 / 555

页数：4

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