DETERMINATION OF CARRIER LIFETIME IN P-I-N-DIODES BY RAMP RECOVERY

被引：8

作者：

DHARIWAL, SR ^{[1
]}

SHARMA, RC ^{[1
]}

机构：

[1] LM COLL SCI, DEPT PHYS, JODHPUR 342003, INDIA

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 02期

关键词：

D O I：

10.1109/55.144971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ramp recovery method for the measurement of carrier lifetime in p-i-n diodes is analyzed to show that Tien and Hu's formula tau = square-root t(A)(t(A) + t(B)), where t(A) and t(B) are the two intervals for the recovery, gives a good estimate of the lifetime. The recovery can be assumed to be complete at a time t2 at which the reverse current has reduced to 10% of its peak value. This eliminates the necessity of assuming the ramp recovery waveform to be a triangle.

引用

页码：98 / 101

页数：4

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