ENHANCED AMBIPOLAR INPLANE TRANSPORT IN AN INAS/GAAS HETERO-N-I-P-I

被引：11
|
作者：
MCCALLUM, DS [1 ]
CARTWRIGHT, AN [1 ]
HUANG, XR [1 ]
BOGGESS, TF [1 ]
SMIRL, AL [1 ]
HASENBERG, TC [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期
关键词：
D O I：
10.1063/1.352897
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In-plane transport in an InAs/GaAs semiconductor hetero-n-i-p-i has been investigated using picosecond transient grating techniques and an order-of-magnitude enhancement of the ambipolar transport relative to that measured in a similar undoped sample has been demonstrated. Both the magnitude and the density dependence of this enhanced transport are consistent with an additional driving force that is associated with an in-plane modulation of the screened n-i-p-i field. This modulation is the result of the spatial separation by perpendicular transport of electrons and holes that also have an in-plane density modulation.
引用
收藏
页码：3860 / 3866
页数：7
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