Photocurrent Optimize of InAs/GaAs p-i-p Quantum Dots Infrared Photodetectors

被引：0
|
作者：
Zhang, B. [1 ]
Lu, H. D. [1 ]
Ning, W. G. [1 ]
Guo, F. M. [1 ]
机构：
[1] East China Normal Univ, Sch Informat Sci Technol, Shanghai 200241, Peoples R China
来源：
2016 IEEE 11TH ANNUAL INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2016年
关键词：
InAs quantum dots; infrared photodetectors; quantum dots density; super lattice;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were detailedly demonstrated by Apsys software in the paper. The device consists of Al0.3Ga0.7As/GaAs supper lattice (SL) and InAs quantum dots (QDs) embedded in In0.15Ga0.85As, which make device has an advantages of low dark current and large photocurrent at room temperature (300K). The dark current and photocurrent of the device with different InAs QDs density and the number of Al0.3Ga0.7As/GaAs SL is discussed detailedly.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Effect of quantum dots on InAs/GaAs p-i-p quantum dots infrared photodetectors
    Zhang, B.
    Lu, H. D.
    Guo, F. M.
    INTEGRATED FERROELECTRICS, 2017, 178 (01) : 73 - 78
  • [2] InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
    Park, M. S.
    Jain, V.
    Lee, E. H.
    Kim, S. H.
    Pettersson, H.
    Wang, Q.
    Song, J. D.
    Choi, W. J.
    ELECTRONICS LETTERS, 2014, 50 (23) : 1731 - 1732
  • [3] Impact of ternary capping on p-i-p InAs/GaAs quantum dot infrared photodetectors
    Deviprasad, Vidya P.
    Ghadi, Hemant
    Das, Debabrata
    Panda, Debiprasad
    Chakrabarti, Subhananda
    QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XVI, 2019, 10929
  • [4] Influence of modulation doping on p-i-p quantum dots (InAs/GaAs) based infrared detector performance
    Deviprasad, Vidya P.
    Ghadi, Hemant
    Das, Debabrata
    Panda, Debiprasad
    Chavan, Vinayak
    Raut, Pravin
    Aanand, Abhijeet
    Chakrabarti, Subhananda
    QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XVI, 2019, 10929
  • [5] Optimization of vertical strain coupling in InAs/GaAs p-i-p quantum dot infrared photodetectors with applied growth strategy
    Dongre, Suryansh
    Paul, Sritoma
    Mondal, Shubham
    Panda, Debiprasad
    Shriram, Saranya Reddy
    Mantri, Manas Ranjan
    Gazi, Sanowar Alam
    Das, Debabrata
    Kumar, Ravinder
    Tongbram, Binita
    Chakrabarti, Subhananda
    JOURNAL OF LUMINESCENCE, 2020, 226
  • [6] Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation.
    Deviprasad, Vidya P.
    Ghadi, Hemant
    Das, Debabrata
    Panda, Debiprasad
    Rawool, Harshal
    Chakrabarti, Subhananda
    INFRARED TECHNOLOGY AND APPLICATIONS XLIV, 2018, 10624
  • [7] High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model
    Deviprasad, Vidya P.
    Ghadi, Hemant
    Das, Debabrata
    Panda, Debiprasad
    Rawool, Harshal
    Chavan, Vinayak
    Tongbram, Binita
    Patwari, Jayita
    Pal, Samir Kumar
    Chakrabarti, Subhananda
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 804 : 18 - 26
  • [8] Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector
    Deviprasad, Vidya P.
    Ghadi, Hemant
    Das, Debabrata
    Panda, Debiprasad
    Chakrabarti, Subhananda
    QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XVI, 2019, 10929
  • [9] Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
    Maimon, S
    Finkman, E
    Bahir, G
    Schacham, SE
    Garcia, JM
    Petroff, PM
    APPLIED PHYSICS LETTERS, 1998, 73 (14) : 2003 - 2005
  • [10] Absorption Coefficient, Mobility and Carrier Lifetime Calculations of P-I-P Quantum Dot Infrared Photodetectors
    Dongre, S.
    Kumar, P. N. V. A.
    Patil, S.
    Gharate, R.
    Singh, R. P.
    8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 133 - 135
12345