Photocurrent Optimize of InAs/GaAs p-i-p Quantum Dots Infrared Photodetectors

被引：0
|
作者：
Zhang, B. [1 ]
Lu, H. D. [1 ]
Ning, W. G. [1 ]
Guo, F. M. [1 ]
机构：
[1] East China Normal Univ, Sch Informat Sci Technol, Shanghai 200241, Peoples R China
来源：
2016 IEEE 11TH ANNUAL INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2016年
关键词：
InAs quantum dots; infrared photodetectors; quantum dots density; super lattice;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were detailedly demonstrated by Apsys software in the paper. The device consists of Al0.3Ga0.7As/GaAs supper lattice (SL) and InAs quantum dots (QDs) embedded in In0.15Ga0.85As, which make device has an advantages of low dark current and large photocurrent at room temperature (300K). The dark current and photocurrent of the device with different InAs QDs density and the number of Al0.3Ga0.7As/GaAs SL is discussed detailedly.
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页数：4
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