Period of photoconductivity oscillations and charge dynamics of quantum dots in p–i–n GaAs/InAs/AlAs heterojunctions

被引：0
|
作者：
Yu. N. Khanin
E. E. Vdovin
O. Makarovskii
M. Henini
机构：
[1] Russian Academy of Sciences,Institute of Microelectronics Technology and High
[2] University of Nottingham,Purity Materials
[3] University of Nottingham,School of Physics and Astronomy
来源：
JETP Letters | 2015年 / 102卷
关键词：
GaAs; JETP Letter; Direct Tunneling; Photoexcited Carrier; Negative Branch;
D O I：
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中图分类号：
学科分类号：
摘要：
Quantum oscillations of photoconductivity in p–i–n GaAs/InAs/AlAs quantum-dot heterojunctions have been studied. The dominating effect of the dynamics of charge accumulation of optically excited holes at quantum dots on the oscillation period and on the general evolution of the holes with a change in the illumination power has been shown within a simple electrostatic model. Investigation of the temperature dependence of the oscillating structure of the current–voltage characteristics has confirmed our interpretation.
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页码：720 / 726
页数：6
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