Period of photoconductivity oscillations and charge dynamics of quantum dots in p–i–n GaAs/InAs/AlAs heterojunctions

被引：0
|
作者：
Yu. N. Khanin
E. E. Vdovin
O. Makarovskii
M. Henini
机构：
[1] Russian Academy of Sciences,Institute of Microelectronics Technology and High
[2] University of Nottingham,Purity Materials
[3] University of Nottingham,School of Physics and Astronomy
来源：
JETP Letters | 2015年 / 102卷
关键词：
GaAs; JETP Letter; Direct Tunneling; Photoexcited Carrier; Negative Branch;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Quantum oscillations of photoconductivity in p–i–n GaAs/InAs/AlAs quantum-dot heterojunctions have been studied. The dominating effect of the dynamics of charge accumulation of optically excited holes at quantum dots on the oscillation period and on the general evolution of the holes with a change in the illumination power has been shown within a simple electrostatic model. Investigation of the temperature dependence of the oscillating structure of the current–voltage characteristics has confirmed our interpretation.
引用
收藏
页码：720 / 726
页数：6
相关论文
共 50 条
  • [21] Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs
    Offermans, P
    Koenraad, PM
    Wolter, JH
    Pierz, K
    Roy, M
    Maksym, PA
    PHYSICAL REVIEW B, 2005, 72 (16)
  • [22] Carrier dynamics in small InAs/GaAs quantum dots
    Zurauskiene, N
    Marcinkevicius, S
    Janssen, G
    Goovaerts, E
    Bouwen, A
    Koenraad, PM
    Wolter, JH
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001, 2002, 384-3 : 31 - 34
  • [23] Refractive index dynamics of InAs/GaAs quantum dots
    Crowley, M. T.
    Houlihan, J.
    Piwonski, T.
    O'Driscoll, I.
    Williams, D. P.
    O'Reilly, E. P.
    Uskov, A. V.
    Huyet, G.
    APPLIED PHYSICS LETTERS, 2013, 103 (02)
  • [24] Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices
    Wang, JZ
    Wang, ZM
    Wang, ZG
    Yang, Z
    Feng, SL
    APPLIED PHYSICS LETTERS, 2000, 76 (15) : 2035 - 2037
  • [25] Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots
    A. V. Antonov
    V. M. Daniltsev
    M. N. Drozdov
    Yu. N. Drozdov
    L. D. Moldavskaya
    V. I. Shashkin
    Semiconductors, 2012, 46 : 1415 - 1417
  • [26] Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots
    Antonov, A. V.
    Daniltsev, V. M.
    Drozdov, M. N.
    Drozdov, Yu. N.
    Moldavskaya, L. D.
    Shashkin, V. I.
    SEMICONDUCTORS, 2012, 46 (11) : 1415 - 1417
  • [27] Electric transport and frozen photoconductivity in layers of quantum dots in structures of InAs/GaAs
    Kul'bachinskij, V.A.
    Lunin, R.A.
    Kytin, V.G.
    Golikov, A.V.
    Demin, A.V.
    Rogozin, V.A.
    Zvonkov, B.N.
    Nekorkin, S.M.
    Filatov, D.O.
    Zhurnal Eksperimental'noj i Teoreticheskoj Fiziki, 2001, 120 (04): : 933 - 945
  • [28] The temperature dependence of electrical and optical properties in InAs/GaAs and GaAs/InAs/AlAs self-assembled quantum dots
    Chiquito, A. J.
    de Souza, M. G.
    Camps, I.
    Gobato, Y. Galvao
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (07) : 912 - 917
  • [29] Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
    D. S. Abramkin
    M. O. Petrushkov
    M. A. Putyato
    B. R. Semyagin
    T. S. Shamirzaev
    Semiconductors, 2018, 52 : 1484 - 1490
  • [30] Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
    Abramkin, D. S.
    Petrushkov, M. O.
    Putyato, M. A.
    Semyagin, B. R.
    Shamirzaev, T. S.
    SEMICONDUCTORS, 2018, 52 (11) : 1484 - 1490
12345