Period of photoconductivity oscillations and charge dynamics of quantum dots in p–i–n GaAs/InAs/AlAs heterojunctions

被引：0
|
作者：
Yu. N. Khanin
E. E. Vdovin
O. Makarovskii
M. Henini
机构：
[1] Russian Academy of Sciences,Institute of Microelectronics Technology and High
[2] University of Nottingham,Purity Materials
[3] University of Nottingham,School of Physics and Astronomy
来源：
JETP Letters | 2015年 / 102卷
关键词：
GaAs; JETP Letter; Direct Tunneling; Photoexcited Carrier; Negative Branch;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Quantum oscillations of photoconductivity in p–i–n GaAs/InAs/AlAs quantum-dot heterojunctions have been studied. The dominating effect of the dynamics of charge accumulation of optically excited holes at quantum dots on the oscillation period and on the general evolution of the holes with a change in the illumination power has been shown within a simple electrostatic model. Investigation of the temperature dependence of the oscillating structure of the current–voltage characteristics has confirmed our interpretation.
引用
收藏
页码：720 / 726
页数：6
相关论文
共 50 条
  • [31] Photocurrent Optimize of InAs/GaAs p-i-p Quantum Dots Infrared Photodetectors
    Zhang, B.
    Lu, H. D.
    Ning, W. G.
    Guo, F. M.
    2016 IEEE 11TH ANNUAL INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS), 2016,
  • [32] Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots
    Braun, P. -F.
    Lombez, L.
    Marie, X.
    Urbaszek, B.
    Amand, T.
    Renucci, P.
    Gauffier, J. -L.
    Kalevich, V. K.
    Kavokin, K. V.
    Krebs, O.
    Voisin, P.
    BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (2A) : 482 - 487
  • [33] AlAs coating for stacked structure of self-assembled InAs/GaAs quantum dots
    Yokota, H.
    Iizuka, K.
    Okamoto, H.
    Suzuki, T.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 825 - 827
  • [34] Characterization of the morphology and optical properties of InAs/AlAs quantum dots with a GaAs insertion layer
    Roh, Cheong Hyun
    Song, Hong Joo
    Kim, Dong Ho
    Park, Joon Soo
    Choi, Yeon-Shik
    Kim, Hoon
    Hahn, Cheol-Koo
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)
  • [35] Capacitance spectroscopy of single-barrier GaAs/AlAs/GaAs structures containing InAs quantum dots
    Belyaev, AE
    Eaves, L
    Main, PC
    Polimeni, A
    Stoddart, ST
    Henini, M
    ACTA PHYSICA POLONICA A, 1998, 94 (02) : 245 - 249
  • [36] Shape transformation of self-assembled InAs quantum dots by overgrowth with GaAs and AlAs
    Schramm, A.
    Schaefer, J.
    Kipp, T.
    Heyn, Ch.
    Hansen, W.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 748 - 750
  • [37] Enhanced tunneling in the GaAs p+-n+ junction by embedding InAs quantum dots
    Wang, Lijuan
    He, Jifang
    Shang, Xiangjun
    Li, Mifeng
    Yu, Ying
    Zha, Guowei
    Ni, Haiqiao
    Niu, Zhichuan
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (11)
  • [38] Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots
    Lingk, C
    von Plessen, G
    Feldmann, J
    Stock, K
    Arzberger, M
    Böhm, G
    Amann, MC
    Abstreiter, G
    APPLIED PHYSICS LETTERS, 2000, 76 (24) : 3507 - 3509
  • [39] Dynamics of the growth of InAs quantum dots on GaAs(001) substrates
    Westwood, D.I.
    Brown, I.H.
    Linsell, D.N.J.
    Matthai, C.C.
    Materials Research Society Symposium - Proceedings, 2000, 571 : 337 - 342
  • [40] Dynamics of the growth of InAs quantum dots on GaAs(001) substrates
    Westwood, DI
    Brown, IH
    Linsell, DNJ
    Matthai, CC
    SEMICONDUCTOR QUANTUM DOTS, 2000, 571 : 337 - 342
12345