Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices

被引：1
|
作者：
Wang, JZ [1 ]
Wang, ZM
Wang, ZG
Yang, Z
Feng, SL
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
[3] Hong Kong Univ Sci & Technol, Adv Mat Res Inst, Kowloon, Hong Kong, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 15期
关键词：
D O I：
10.1063/1.126246
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical properties of InAs quantum dots in n-i-p-i GaAs superlattices are investigated by photoluminescence (PL) characterization. We have observed an anomalously large blueshift of the PL peak and increase of the PL linewidth with increasing excitation intensity, much smaller PL intensity decrease, and faster PL peak redshift with increasing temperature as compared to conventional InAs quantum dots embedded in intrinsic GaAs barriers. The observed phenomena can all be attributed to the filling effects of the spatially separated photogenerated carriers. (C) 2000 American Institute of Physics. [S0003-6951(00)03515-4].
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页码：2035 / 2037
页数：3
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