<<Self-organized>> InAs/GaAs quantum dots.

被引:5
|
作者
Marzin, JY
Gerard, JM
Cabrol, O
Jusserand, B
Sermage, B
机构
[1] Laboratoire de Bagneux, France Telecom, PAB, Bagneux Cedex, 92225
关键词
D O I
10.1007/BF02457200
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing mesas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.
引用
收藏
页码:1285 / 1293
页数:9
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