<<Self-organized>> InAs/GaAs quantum dots.

被引：5
|
作者：
Marzin, JY
Gerard, JM
Cabrol, O
Jusserand, B
Sermage, B
机构：
[1] Laboratoire de Bagneux, France Telecom, PAB, Bagneux Cedex, 92225
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1995年 / 17卷 / 11-12期
关键词：
D O I：
10.1007/BF02457200
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing mesas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.
引用
收藏
页码：1285 / 1293
页数：9
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