Quantum size effect in self-organized InAs/GaAs quantum dots

被引:105
|
作者
Heitz, R
Stier, O
Mukhametzhanov, I
Madhukar, A
Bimberg, D
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ So Calif, Dept Phys, Photon Mat & Devices Lab, Los Angeles, CA 90089 USA
[3] Univ So Calif, Dept Mat Sci, Photon Mat & Devices Lab, Los Angeles, CA 90089 USA
关键词
D O I
10.1103/PhysRevB.62.11017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The quantum size effect of exciton transitions is investigated experimentally and theoretically for self-organized InAs/GaAs quantum dots (QD's). Photoluminescence excitation (PLE) experiments are reported for a series of samples with QD's varying in average size, revealing size-dependent excitation resonances. Temperature-dependent measurements show that the PLE spectra mirror the absorption spectra of QD's with a certain ground state transition energy. The observed PLE resonances are identified based on their energy, relative intensity, and sensitivity to size variations in comparison to results of eight-band k.p calculations for pyramidal InAs/GaAs QD's with {101} side facets. Band mixing, strain, and the particular geometry of the three-dimensional confinement lead to a rich fine structure with a variety of ''forbidden'' excitonic transitions. A good agreement between experiment and theory is found for large QD's (E(det)less than or similar to1.1 eV), whereas the agreement becomes worse for smaller QD's. The discrepancies arise, most likely, from the uncertainties in the size- and growth-dependent variations of the QD shape and composition as well as Coulomb-induced localized wetting layer states.
引用
收藏
页码:11017 / 11028
页数:12
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