PREPARATION AND PROPERTIES OF GAAS DEVICES BY MOLECULAR-BEAM EPITAXY

被引:22
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作者
CHO, AY [1 ]
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[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
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D O I
10.7567/JJAPS.16S1.435
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O59 [应用物理学];
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页码:435 / 442
页数:8
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