AN STM STUDY OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS

被引：60
|
作者：
SUDIJONO, J
JOHNSON, MD
ELOWITZ, MB
SNYDER, CW
ORR, BG
机构：
[1] H.M. Randall Laboratory, University of Michigan, Ann Arbor
来源：
SURFACE SCIENCE | 1993年 / 280卷 / 03期
关键词：
D O I：
10.1016/0039-6028(93)90678-D
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Scanning tunneling microscopy has been used to investigate molecular-beam epitaxy growth of GaAs. By quenching the sample during deposition, we have imaged the GaAs(001) surface as it appeared during growth. Large scale images of the surface have been obtained at coverages varying from 0.25 to 1500 layers.
引用
收藏
页码：247 / 257
页数：11
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