A 45GHZ ALGAAS/GAAS HBT IC TECHNOLOGY WITHOUT ION-IMPLANTATION

被引：0
|
作者：
PRASAD, SJ
VETANEN, B
HAYNES, C
PARK, S
BEERS, I
DIAMOND, S
PUBANZ, G
EBNER, J
SANIELEVICI, S
AGOSTON, A
机构：
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90465-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.
引用
收藏
页码：413 / 416
页数：4
相关论文
共 50 条
  • [31] RF characterisation and modelling of AlGaAs/GaAs HBT for 1.8 GHz applications
    Cazarré, A
    Tasselli, J
    Souverain, P
    Verdier, J
    Marty, A
    [J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1999, 7 (03): : 241 - 246
  • [32] RF characterization and modelling of AlGaAs/GaAs HBT for 1.8 GHz applications
    Lab. d'Anal. et d'Arch. des Systemes, CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
    [J]. EPJ Appl Phys, 3 (241-246):
  • [33] 25 GHZ DIELECTRIC RESONATOR OSCILLATOR USING AN ALGAAS/GAAS HBT
    OGAWA, K
    IKEDA, H
    ISHIZAKI, T
    HASHIMOTO, K
    OTA, Y
    [J]. ELECTRONICS LETTERS, 1990, 26 (18) : 1514 - 1516
  • [34] HIGH LINEARITY POWER OPERATION OF ALGAAS/GAAS HBT AT 10 GHZ
    WANG, NL
    HO, WJ
    HIGGINS, JA
    [J]. ELECTRONICS LETTERS, 1992, 28 (01) : 55 - 56
  • [35] ENHANCED INTERDIFFUSION OF GAAS-ALGAAS INTERFACES FOLLOWING ION-IMPLANTATION AND RAPID THERMAL ANNEALING
    KAHEN, KB
    RAJESWARAN, G
    PETERSON, DL
    ZHENG, LR
    OTT, ML
    [J]. ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 291 - 296
  • [36] ALUMINUM ION-IMPLANTATION ENHANCED INTERMIXING OF GAAS-ALGAAS QUANTUM-WELL STRUCTURES
    KASH, K
    TELL, B
    GRABBE, P
    DOBISZ, EA
    CRAIGHEAD, HG
    TAMARGO, MC
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) : 190 - 194
  • [37] Packaged 30 Gbit/s data demultiplexing and clock extraction IC fabricated in a AlGaAs/GaAs HBT technology
    Runge, K
    Yu, RY
    Zampardi, PJ
    Pierson, RL
    Wang, KC
    Blixt, P
    Petersen, AK
    [J]. ELECTRONICS LETTERS, 1996, 32 (06) : 588 - 589
  • [38] 40 GBIT/S ALGAAS/GAAS HBT 4/1 MULTIPLEXER IC
    RUNGE, K
    PIERSON, RL
    ZAMPARDI, PJ
    THOMAS, PB
    YU, J
    WANG, KC
    [J]. ELECTRONICS LETTERS, 1995, 31 (11) : 876 - 877
  • [39] A 15-GHZ MONOLITHIC LOW-PHASE-NOISE VCO USING ALGAAS GAAS HBT TECHNOLOGY
    YAMAUCHI, Y
    KAMITSUNA, H
    NAKATSUGAWA, M
    ITO, H
    MURAGUCHI, M
    OSAFUNE, K
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (10) : 1444 - 1447
  • [40] TRANSFERABILITY OF A SIMPLE ION-IMPLANTATION PROCESS IN GAAS
    ANDERSON, CL
    DUNLAP, HL
    MOLNAR, B
    COMAS, J
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C119 - C119
12345