A 45GHZ ALGAAS/GAAS HBT IC TECHNOLOGY WITHOUT ION-IMPLANTATION

被引：0
|
作者：
PRASAD, SJ
VETANEN, B
HAYNES, C
PARK, S
BEERS, I
DIAMOND, S
PUBANZ, G
EBNER, J
SANIELEVICI, S
AGOSTON, A
机构：
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90465-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.
引用
收藏
页码：413 / 416
页数：4
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