ION-IMPLANTATION IN BIPOLAR TECHNOLOGY

被引：10
|
作者：
HILL, C
HUNT, P
机构：
[1] Plessey Research Caswell Ltd., Caswell, Towcester
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(91)96125-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Over the past 15 years, ion implantation has increased its role in advanced bipolar integrated circuit technology from zero to 80-90% of the doping steps. The history of this change is briefly described, and the technical reasons for fabrication of each component using ion implantation are discussed. During the next decade, considerable further improvements in speed and packing density of bipolar integrated circuits will be achieved by the adoption of novel structures and materials. Some likely applications of ion implantation in this context are described.
引用
收藏
页码：1 / 8
页数：8
相关论文
共 50 条
  • [1] ION-IMPLANTATION TECHNOLOGY
    KEENAN, WA
    [J]. SOLID STATE TECHNOLOGY, 1991, 34 (10) : 55 - 55
  • [2] ION-IMPLANTATION TECHNOLOGY AND DEVICE APPLICATIONS
    COMAS, J
    [J]. IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04): : 234 - 239
  • [3] ION-IMPLANTATION IN FUTURE MOS TECHNOLOGY
    TASCH, AF
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 3 - 6
  • [4] MEV ION-IMPLANTATION IN GAAS TECHNOLOGY
    THOMPSON, PE
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 592 - 599
  • [5] FABRICATION OF BIPOLAR-TRANSISTORS BY MASKLESS ION-IMPLANTATION
    REUSS, RH
    MORGAN, D
    GOLDENETZ, A
    CLARK, WM
    RENSCH, DB
    UTLAUT, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 290 - 294
  • [6] THE APPLICATION OF NITROGEN ION-IMPLANTATION IN SILICON TECHNOLOGY
    JOSQUIN, WJMJ
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 581 - 587
  • [7] TRENDS IN ION-IMPLANTATION IN SILICON VLSI TECHNOLOGY
    TOKUYAMA, T
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 299 - 306
  • [8] ION-IMPLANTATION AND CATALYSIS - ELECTROCHEMICAL APPLICATIONS OF ION-IMPLANTATION
    WOLF, GK
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 875 - 885
  • [9] ION-IMPLANTATION
    WEYER, G
    [J]. HYPERFINE INTERACTIONS, 1986, 27 (1-4): : 249 - 262
  • [10] ION-IMPLANTATION
    DEARNALEY, G
    [J]. VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1974, 29 (174): : 401 - 406
12345