USE OF NOISE THERMOMETRY TO STUDY THE EFFECTS OF SELF-HEATING IN SUBMICROMETER SOI MOSFETS

We report the direct measurement of the silicon island temperature in both long and submicrometer thin-film SOI MOSFET's as a function of bias conditions using noise thermometry. We show that the device island temperature increases with drain voltage and that this results in a reduction of saturated drain current. Using standard models of the drain current and velocity/field expression, we show that a thermally induced fall in mobility quantitatively accounts for the loss in drain current drive observed.