USE OF NOISE THERMOMETRY TO STUDY THE EFFECTS OF SELF-HEATING IN SUBMICROMETER SOI MOSFETS

被引：32
|
作者：
BUNYAN, RJT
UREN, MJ
ALDERMAN, JC
ECCLESTON, W
机构：
[1] NATL UNIV IRELAND UNIV COLL CORK,NATL MICROELECTR RES CTR,CORK,IRELAND
[2] UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,LIVERPOOL L69 3BX,ENGLAND
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 05期
关键词：
D O I：
10.1109/55.145053
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the direct measurement of the silicon island temperature in both long and submicrometer thin-film SOI MOSFET's as a function of bias conditions using noise thermometry. We show that the device island temperature increases with drain voltage and that this results in a reduction of saturated drain current. Using standard models of the drain current and velocity/field expression, we show that a thermally induced fall in mobility quantitatively accounts for the loss in drain current drive observed.
引用
收藏
页码：279 / 281
页数：3
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