AN SEU TOLERANT MEMORY CELL DERIVED FROM FUNDAMENTAL-STUDIES OF SEU MECHANISMS IN SRAM

被引：32
|
作者：
WEAVER, HT
AXNESS, CL
MCBRAYER, JD
BROWNING, JS
FU, JS
OCHOA, A
KOGA, R
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期
关键词：
D O I：
10.1109/TNS.1987.4337466
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1281 / 1286
页数：6
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