Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening

被引：0

作者：

洪新红 ^{[1
]}

潘立阳 ^{[1
]}

张文帝 ^{[1
]}

纪冬梅 ^{[2
]}

伍冬 ^{[1
]}

沈忱 ^{[2
]}

许军 ^{[1
]}

机构：

[1] Institute of Microelectronics, Tsinghua University

[2] Cogenda Co

来源：

Journal of Semiconductors | 2015年 / 36卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

摘要：

A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size.

引用

页码：40 / 44

页数：5

共 18 条

[1] Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening
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JOURNAL OF SEMICONDUCTORS, 2015, 36 (11)
[2] Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening
洪新红
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纪冬梅
伍冬
沈忱
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Journal of Semiconductors, 2015, (11) : 40 - 44
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[9] Characterization of various FinFET based 6T SRAM cell configurations in light of radiation effect
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