ION-BEAM DOPING OF MBE SILICON BY AS+

被引：7

作者：

HOUGHTON, DC ^{[1
]}

DENHOFF, MW ^{[1
]}

JACKMAN, TE ^{[1
]}

SWANSON, ML ^{[1
]}

PARIKH, N ^{[1
]}

机构：

[1] UNIV N CAROLINA, DEPT PHYS & ASTRON, CHAPEL HILL, NC 27514 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 12期

关键词：

Arsenic - Ion Beams--Applications - Molecular Beam Epitaxy;

D O I：

10.1149/1.2095512

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The incorporation and electrical activation of As+ ions simultaneously implanted in Si(100) epilayers during MBE growth (700°C) are reported. Bulk-like mobilities, 100% activation, and excellent crystalline quality were obtained using 1 keV As+ ions at growth rates 0.1-0.3 nm s-1. No deterioration in crystal quality was found as the As level was varied from 1016 to 2&middot1020 cm-3 at 700°C, but at lower growth temperatures. As solubility limited the incorporation of As on substitutional sites. The maximum concentration for fully activated As has been determined for the growth temperature range 450°-800°C. The lower temperature limit for epitaxial growth during simultaneous ion beam doping with 1 keV As+ was found to be approx. 375°C.

引用

页码：3109 / 3113

页数：5

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