FOCUSED ION-BEAM GALLIUM IMPLANTATION INTO SILICON

被引：28
|
作者：
TAMURA, M [1 ]
SHUKURI, S [1 ]
MONIWA, M [1 ]
DEFAULT, M [1 ]
机构：
[1] ECOLE SUPER PHYS & CHIM IND,F-75005 PARIS,FRANCE
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 03期
关键词：
D O I：
10.1007/BF00620733
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：183 / 190
页数：8
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