共 50 条
- [1] CHARACTERIZATION OF SILICON BY ION-BEAM TECHNIQUES - INTRODUCTION [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1984, 8 (1-2): : 3 - 9
- [2] CHARACTERIZATION OF EFG SILICON RIBBONS BY ION-BEAM TECHNIQUES [J]. SOLAR CELLS, 1980, 1 (02): : 153 - 157
- [3] ION-BEAM CHARACTERIZATION OF THE ION-IMPLANTED ARSENIC TAIL IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 47 (01): : 29 - 32
- [4] ION-BEAM ANNEALING OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C110 - C110
- [5] ION-BEAM TECHNIQUES IN MICROELECTRONICS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 89 (1-4): : 298 - 306
- [6] CHARACTERIZATION OF SILICON IMPLANTED WITH FOCUSED ION-BEAM BY RAMAN MICROPROBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06): : 903 - 907
- [7] ION-BEAM ANALYSIS TECHNIQUES AND CHARACTERIZATION OF AMORPHOUS HYDROGENATED GAAS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 579 - 583
- [8] SURFACE MODIFICATION OF DENSE SILICON-NITRIDE BY ION-BEAM TECHNIQUES [J]. SILICON NITRIDE 93, 1994, 89-9 : 319 - 323
- [9] ION-BEAM ETCHING OF SILICON DIOXIDE ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1893 - 1898