CHARACTERIZATION OF SILICON BY ION-BEAM TECHNIQUES - CONCLUSION

被引：0

作者：

SIFFERT, P

机构：

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1984年 / 8卷 / 1-2期

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D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：181 / 184

页数：4

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