PHYSICAL AND ELECTRICAL CHARACTERIZATION OF OXYNITRIDE FILMS PRODUCED BY PLASMA OXIDATION OF DEPOSITED SILICON-NITRIDE LAYERS

被引：10
|
作者：
KENNEDY, GP
TAYLOR, S
ECCLESTON, W
ARNOLDBIK, WM
HABRAKEN, FHPM
机构：
[1] Department of Electrical Engineering, Electronics The University of Liverpool, Liverpool, L69 3BX, Brownlow Hill
[2] Now with the Department of Electronics and Computer Science, The University of Southampton, Southhampton
[3] Atom and Interface Physics, University of Utrecht, Utrecht
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00033-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
LPCVD silicon nitride films have been oxidised in an oxygen plasma using low thermal budget plasma anodisation to produce oxynitride films. The electrical integrity of these films was generally shown to improve following oxidation and a model of the conduction processes in the oxynitride has been suggested.
引用
收藏
页码：141 / 144
页数：4
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