PLASMA-DEPOSITED SILICON-NITRIDE FILMS FROM ORGANOSILICON MONOMERS

被引：0

作者：

BROOKS, TA ^{[1
]}

HESS, DW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C125 / C125

页数：1

共 50 条

[1] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS
YOKOYAMA, S
KAJIHARA, N
HIROSE, M
OSAKA, Y
YOSHIHARA, T
ABE, H
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5470 - 5474
[2] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE
CHOW, R
LANFORD, WA
KEMING, W
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C372 - C372
[3] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
WELLS, VA
HAMPY, RE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1750 - 1754
[4] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
WELLS, VA
HAMPY, RE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C143 - C143
[5] PLASMA-DEPOSITED SILICON-NITRIDE FILMS IN HMDS (HEXAMETHYLDISILAZANE) VAPORS
JANCA, J
NECASOVA, M
SIKOLA, T
ACTA PHYSICA SLOVACA, 1983, 33 (03) : 187 - 193
[6] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
LANFORD, WA
RAND, MJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C286 - C286
[7] PREPARATION AND CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE
BLAAUW, C
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1114 - 1118
[8] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
LANFORD, WA
RAND, MJ
JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477
[9] HYDROGEN AND DEUTERIUM MIGRATION IN ANNEALED PLASMA-DEPOSITED SILICON-NITRIDE FILMS
SAVALL, C
BRUYERE, JC
THIN SOLID FILMS, 1995, 258 (1-2) : 1 - 4
[10] THE INFLUENCE OF UNDERLYING METALS ON THE HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED SILICON-NITRIDE FILMS
KIKKAWA, T
ENDO, N
JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 958 - 965

← 1 2 3 4 5 →