CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS

被引：47

作者：

YOKOYAMA, S ^{[1
]}

KAJIHARA, N ^{[1
]}

HIROSE, M ^{[1
]}

OSAKA, Y ^{[1
]}

YOSHIHARA, T ^{[1
]}

ABE, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.327505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5470 / 5474

页数：5

共 50 条

[1] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE
CHOW, R
LANFORD, WA
KEMING, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C372 - C372
[2] PREPARATION AND CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE
BLAAUW, C
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1114 - 1118
[3] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
WELLS, VA
HAMPY, RE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1750 - 1754
[4] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
WELLS, VA
HAMPY, RE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C143 - C143
[5] PLASMA-DEPOSITED SILICON-NITRIDE FILMS FROM ORGANOSILICON MONOMERS
BROOKS, TA
HESS, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C125 - C125
[6] PLASMA-DEPOSITED SILICON-NITRIDE FILMS IN HMDS (HEXAMETHYLDISILAZANE) VAPORS
JANCA, J
NECASOVA, M
SIKOLA, T
[J]. ACTA PHYSICA SLOVACA, 1983, 33 (03) : 187 - 193
[7] CHARACTERIZATION OF OXYGEN-DOPED PLASMA-DEPOSITED SILICON-NITRIDE
KNOLLE, WR
OSENBACH, JW
ELIA, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C317 - C317
[8] CHARACTERIZATION OF OXYGEN-DOPED, PLASMA-DEPOSITED SILICON-NITRIDE
KNOLLE, WR
OSENBACH, JW
ELIA, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) : 1211 - 1217
[9] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
LANFORD, WA
RAND, MJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C286 - C286
[10] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
LANFORD, WA
RAND, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477

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