THE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE AND SILICON-NITRIDE COATED GRAPHITE

被引：2
|
作者：
FERGUS, JW [1 ]
WORRELL, WL [1 ]
机构：
[1] UNIV PENN,DEPT MAT SCI & ENGN,PHILADELPHIA,PA 19104
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 01期
关键词：
D O I：
10.1149/1.2043862
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Chemically vapor deposited (CVD) Si3N4 is one of the highest purity forms of Si3N4 currently available, so the protective silica scale formed during oxidation in a pure oxygen atmosphere is also of high purity. The oxidation of CVD Si3N4 and CVD Si(3)M(4) coated graphite in 1 atm dry oxygen at 1500 degrees C has been measured and is compared with results from the literature for the growth of high purity silica on CVD Si3N4 and on CVD SiC.
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页码：183 / 185
页数：3
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