EFFECTS OF DEPOSITION METHODS ON THE PROPERTIES OF SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS

被引：10
|
作者：
HIRAO, T
KITAGAWA, M
KAMADA, T
TSUKAMOTO, K
YOSHIOKA, Y
KURAMASU, K
KORECHIKA, T
WASA, K
机构：
[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
[2] MATSUSHITA ELECT COMPONENTS CO LTD,RES & DEV LAB,KADOMA,OSAKA,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 09期
关键词：
D O I：
10.1143/JJAP.27.1609
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1609 / 1615
页数：7
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