PROPERTIES INVESTIGATION OF THIN SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION

被引：15
|
作者：
KOMAROV, FF
ROGALEVICH, IA
TISHKOV, VS
机构：
[1] Inst. Appl. Phys. Probl., Byelorussian State Univ., Minsk, Belarus
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 39卷 / 3-4期
关键词：
Compendex;
D O I：
10.1080/00337577808234470
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
SILICON AND ALLOYS
引用
收藏
页码：163 / 167
页数：5
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