IONIZATION ENHANCED MIGRATION OF THE ISOLATED VACANCY IN PARA-TYPE SILICON

被引：0
|
作者：
CHATTERJEE, AP [1 ]
WATKINS, GD [1 ]
机构：
[1] LEHIGH UNIV,BETHLEHEM,PA 18015
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：325 / 325
页数：1
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