PHOTOCATHODIC HYDROGENATION OF PARA-TYPE SILICON

被引：16

作者：

DEMIERRY, P ^{[1
]}

ETCHEBERRY, A ^{[1
]}

AUCOUTURIER, M ^{[1
]}

机构：

[1] CNRS,ELECTROCHIM INTERFACIALE LAB,F-92195 MEUDON,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.347377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electrolytic technique is shown to introduce hydrogen into p-type silicon at room temperature. The penetration depths investigated by secondary ion mass spectroscopy are found to be strongly dependent on the doping level. These differences are explained in terms of a donor hydrogen-related level close to the midgap.

引用

页码：1099 / 1101

页数：3

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